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| Datasheet File OCR Text: |
| geometry principal device type cfsh01-30l gross die per 5 inch wafer 251,364 process CPD109R schottky diode low v f schottky diode chip process details die size 8.3 x 8.3 mils die thickness 3.9 mils anode bonding pad area 5.4 x 5.4 mils top side metalization al - 20,000? back side metalization au - 12,000? www.centralsemi.com r0 (13-april 2011)
process CPD109R typical electrical characteristics www.centralsemi.com r0 (13-april 2011) |
Price & Availability of CPD109R
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